What are the physical methods for preparing semiconductor thin film materials? Research on the physical preparation methods of semiconductor thin film materials

Semiconductor thin filmIt is the main component of semiconductor electronic devices and has important theoretical and practical value. Different semiconductor materials have different preparation methods, such as vapor deposition, solvent deposition, sputtering, epitaxy, etc. Physical methods are one of the main methods for preparing semiconductor thin film materials, which utilize physical phenomena for thin film preparation. This article mainly introduces the physical methods for preparing semiconductor thin film materials.

1、 Vapor deposition method

Vapor deposition is a common physical method that refers to the process of depositing liquid or solid substances on a substrate surface under the action of evaporated semiconductor material. The vapor deposition method can be used to prepare various materials, such as gallium selenide, germanium selenide, zinc selenide, selenium silicide, and silicon nitride. In addition, the vapor deposition method can also be used to prepare composite materials, such asGermanium/aluminum nitride germanium composite material.

2、 Solvent deposition method

Solvent deposition is a physical method of dissolving semiconductor materials in a solvent and then adding them to a substrate to form a thin film. The solvent deposition method is used to prepare various semiconductor materials, such as gallium nitride, germanium nitride, zinc nitride, silicon nitride, selenium silicide, etc. It can also be used to prepare composite materials, such as gallium nitride/aluminum nitride germanium composite materials.

3、 Sputtering method

Sputtering refers to the physical method of placing semiconductor material into a sputtering chamber, and then using pneumatic pressure to accelerate it with sputtering and shoot it onto a substrate. Sputtering method can be used to prepare semiconductor materials such as gallium nitride, germanium nitride, zinc nitride, silicon nitride, etc. It can also be used to prepare composite materials such as germanium/aluminum nitride germanium composite materials.

4、 Epitaxial method

Epitaxy is a physical method of depositing semiconductor material onto a substrate to form a thin film. Epitaxial method can be used to prepare semiconductor materials such as gallium nitride, germanium nitride, zinc nitride, silicon nitride, selenium silicide, etc. It can also be used to prepare composite materials, such as gallium nitride/aluminum germanium composite materials. The epitaxial method has important application value in the preparation of semiconductor materials.

5、 Laser etching method

Laser etching method refers to the process of etching on a substrateLaser etching of semiconductor materialsA physical method of forming a thin film. Laser etching method can be used to prepare semiconductor materials such as gallium nitride, germanium nitride, zinc nitride, silicon nitride, selenium silicide, etc. It can also be used to prepare composite materials, such as gallium nitride/aluminum germanium composite materials.

In summary, the physical preparation methods of semiconductor thin film materials mainly include vapor deposition, solvent deposition, sputtering, epitaxy, and laser etching. These physical methods have certain advantages and can be used to prepare various semiconductor materials and their composites, which have important application value in the preparation of semiconductor electronic devices.