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Uncured characteristics
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Testing instructions
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test method
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Density 3.5g/cc
Filler silver
Viscosity @ 25 ℃ 8000pps
Thixotropic index 5.6
Service life @ 25 ℃ 18 hours
Storage time @ -40 ℃ 1 year
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pycnometer
Brookfield CP51@5rpm
Stickiness @ 0.5/Stickiness @ 5rpm
%Physical service life of fillers
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PT-1
PT-42
PT-61
PT-12
PT-13
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Solidify processed data
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Suggested curing condition: 1 hour @ 175 ℃
Or (1) raise the temperature from 3-5 ℃/min to 175 ℃ for 1 hour @ 175 ℃
This heating and solidification process lowers the bonding surface temperature, allowing the solvent to evaporate and increase strength.
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Curing weight loss of 5.3%
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10 × 10mm silicon chip on glass slide
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PT-80
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Physical and chemical properties before solidification
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Testing instructions
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test method
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Ionic surfactant chloride 5ppm
Sodium 3ppm
Potassium 1ppm
Pumping conductivity 13mmhos/cm
pH 6
Weight loss @ 300 ℃ 0.35%
Glass transition temperature 120 ℃
Thermal expansion coefficient
Below Tg 40 ppm/℃
Above Tg 150 ppm/℃
Dynamic tensile modulus
@-65℃ 4380Mpa
(640Kpsi)
@25℃ 3940Mpa
(570Kpsi)
@150℃ 1960Mpa
(280Kpsi)
@250℃ 300Mpa
(44Kpsi)
Moisture absorption rate
@Saturation 0.6%
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Teflon flask
5 gm sample/20-40 mesh
5 gm DI water
Maintain 100 ℃ for 24 hours
thermogravimetric analysis
TMA penetration mode
TMA expansion mode
Dynamic pyrolysis analysis
use
Samples with a thickness of less than 0.5mm
Dynamic evaporation adsorption
After exposure to 85 ℃/85% RH
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CT-13
CT-6
CT-7
PT-20
MT-14
MT-9
MT-12
PT-65
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Electric heating characteristics after solidification
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Thermal conductivity of 2.5W/m. K
@121℃
Volume resistivity 0.0001 ohm cm
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C-MATIC conductivity detector
4-point detection
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PT-40
PT-46
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Mechanical properties after solidification
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Testing instructions
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detection
method |
Chip shear strength @ 25 ℃ 19kg/die
Chip shear strength and temperature
@25℃ @200℃ @250℃
21kg/die 2.9kg/die 1.7kg/die
11kg/die 2.6kg/die 1.4kg/die
27kg/die 2.4kg/die 2.0kg/die
Chip shear strength after exposure to 85 ℃/85% RH for 168 hours
@25℃ @200℃
12kg/die 1.8kg/die
10kg/die 2.5kg/die
23kg/die 1.8kg/die
Chip thermal deformation at 25 ℃ and chip size
Chip size thermal deformation
7.6×7.6mm(300×300mil) 19mm
10.2×10.2mm(400×400mil) 32mm
12.7×12.7mm(500×500mil) 51mm
Thermal deformation of fragments and electric heating treatment after solidification 2
After solidification, the wire welding mold is baked
(1 minute @ 250 ℃) (4 hours @ 175 ℃)
20mm 29mm 28mm
22mm 30mm 28mm
The data was obtained by changing the heating treatment conditions.
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2 × 2mm (80 × 80mil) silicon chip
3 × 3mm (120 × 120mil) silicon chip
base material
Silver/copper lead frame
Bare copper lead frame
Palladium/nickel/copper lead frame
3 × 3mm (120 × 120mil) silicon chip
base material
Silver/copper lead frame
Bare copper lead frame
Palladium/nickel/copper lead frame
0.38 mm (15mil) thick silicon chip
On a 0.2mm thick silver/copper lead frame
7.6 × 7.6 × 0.38mm (300 × 300 × 15mil) silicon chip
On a 0.2mm (8 mil) thick LF
base material
Silver/copper lead frame
Bare copper lead frame
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MT-4
MT-4
MT-4
MT-15
MT-15
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