Huayuan Semiconductor launches GaN encapsulated chip HYC3655, supporting 65W fast charging applications. Thermal conductive absorbing materials will usher in spring

Combining gallium nitride devices and controllers together is an ideal solution for the current application of gallium nitride devices. The encapsulation solution can minimize the application threshold of gallium nitride, allowing it to be used like ordinary integrated power chips without the need for special driver circuits or specialized drivers. This simplifies circuit design and enables more power engineers to easily get started.

Huayuan Semiconductor has launched a primary edge sealing chip HYC3655 with a built-in 650V withstand voltage and 165m Ω gallium nitride switch tube. This gallium nitride sealing chip integrates gallium nitride power devices, gallium nitride drivers, and multi-mode flyback switch power controllers into one chip. Adopting intelligent digital multi-mode control, supporting CCM/DCM/PFM/burst operation modes to achieve a balance between efficiency and performance.

Huayuan Zhixin Semiconductor (Shenzhen) Co., Ltd. focuses on the design and development of digital power management chips. The company's main backbone has years of rich experience in digital power management chips, and currently has more than 100 full-time employees. More than 90% of the R&D personnel have postgraduate degrees or above, with an average of more than 10 years of work experience. The company is headquartered in Nanshan Science and Technology Park, Shenzhen, and has established research and development centers and offices in Silicon Valley, Wuhan, Hefei, and Hong Kong.

Huayuan Semiconductor HYC3655 adopts DFN8 packaging and has large-area heat dissipation pads, which can reduce the temperature rise during device operation. The chip has built-in frequency jitter to improve EMI performance, and the built-in adaptive gate driver can balance switching losses and EMI, achieving excellent overall performance.

Huayuan Semiconductor HYC3655 supports secondary feedback and built-in loop compensation. Built in rich protection functions, including VCC power supply overvoltage protection, transformer magnetic saturation protection, sampling resistor short circuit protection, overheating protection, overload protection, and output overvoltage protection. The benchmark switching frequency of the chip is 89KHz, supporting frequency reverse control technology to improve the conversion efficiency of high-voltage inputs.

HYC3655 has a standby power consumption of less than 75mW and a low starting current. Can be used for chargers, USB PD fast charging, TV and monitor standby power, laptop adapters, and other applications, providing a simple, easy-to-use, and efficient gallium nitride encapsulated power solution.

Related Reading:

1Huayuan Semiconductor launches two sets of 65W gallium nitride fast charging reference designs

2Huayuan Semiconductor: Digital power chip improves PD fast charging performance