15 well-known third-generation semiconductor companies gather in Shenzhen in March! Did you participate in the thermal conductive material

At this summit, Charging Head Network invited 15 well-known companies in the industry related to gallium nitride and silicon carbide to share the latest industry trends and product technologies on site, and showcase application cases of gallium nitride and silicon carbide devices in different fields. At the same time, nearly 200 power supply industry supporting enterprises will set up booths at the summit site, showcasing up to a thousand new products.

According to statistics, the companies that have registered to participate in the 2022 (Spring) Global Third Generation Semiconductor Industry Summit include Nanomicro Semiconductor, Innolux, Juneng Semiconductor, Gallium Future, and Mapson Transphorm、 Xisu Microelectronics, Xinguan Technology, Nenghua, Basic Semiconductors, Chipline, Yingjiatong, Wotai Chip, Xindong Electronics, GaHua Microelectronics.

In the latest 14th Five Year Plan, it is clearly stated that gallium nitride (GaN) and silicon carbide (SiC) are both on the list, indicating the country's determination to vigorously develop the third-generation semiconductor industry. At the same time, the gallium nitride and silicon carbide industries will also usher in a golden period of development.

According to the dismantling report of the charging head network, gallium nitride technology has achieved large-scale popularization in consumer power supplies. There are hundreds of fast charging power products developed based on gallium nitride technology, including Apple, Huawei, Xiaomi OPPO、 Mobile/laptop giants such as Lenovo, Dell, and Asus. The high efficiency and small size brought by gallium nitride technology are also highly favored by consumers, becoming the mainstream choice for the public to purchase power accessories.

At the same time, silicon carbide diodes have been widely used in PFC circuits of high-power power supplies, and their ultra fast recovery effect helps to improve product efficiency and reduce heat generation; In outdoor power sources, silicon carbide diodes can also exhibit their efficient characteristics and improve product performance.

B56-B61 booth: Nano Micro Semiconductor

Nano Micro Semiconductor (NASDAQ stock code: NVTS was founded in 2014 and is a leading brand in the gallium nitride power chip industry. Gallium nitride power chips integrate gallium nitride power devices with driving, control, and protection, providing faster charging, higher power density, and better energy-saving products for mobile devices, consumer products, enterprises, electric vehicles, and new energy markets.

Nanomicro Semiconductor has over 130 patents that have been issued or are currently being applied for, and more than 30 million GaNFast power chips have been shipped. There have been no on-site reports of any malfunctions related to nano GaN power chips. On October 20, 2021, Nano Micro Semiconductor rang the opening bell of NASDAQ and began trading on NASDAQ. On that day, the company's value exceeded $1 billion and the total financing amount exceeded $320 million.

Booth C62-C65: InnoSeco Technology Co., Ltd

InnoSeco is a globally leading silicon-based gallium nitride IDM enterprise, dedicated to the research and production of 8-inch GaN power electronic devices. The products mainly include high-voltage GaN FETs, low-voltage (200V and below) GaN FETs, and GaN IC, which are respectively used in 5G base stations, industrial Internet, data centers, automatic driving, 5G communication, fast charging and other fields. By utilizing advanced technology and leading device performance, we aim to achieve high-frequency, high-efficiency, and compact end use applications, contributing to green environmental protection.

Booth A26-A29: Qingdao Juneng Chuangxin Microelectronics Co., Ltd

Qingdao Juneng Chuangxin Microelectronics Co., Ltd. is located in Qingdao International Innovation Park, mainly engaged in the research and development, design, production, and sales of third-generation semiconductor silicon-based gallium nitride (GaN), focusing on providing high-performance, low-cost GaN power device products and technical solutions for the industry.

The company possesses industry-leading GaN power device and application design technology. Committed to integrating industry advantages resources, building a GaN device development and application ecosystem, and providing domestic core component support for PD fast charging, smart home appliances, cloud computing, 5G communication, and more. Backed by the support of listed company Sai Microelectronics (300456) and well-known investment funds, Juneng Chuangxin has established an industry-leading management and technology team. In the process of product development and mass production, we always adhere to the requirements of high quality and high reliability. While gaining widespread recognition from partners, gradually becoming an internationally renowned enterprise in the field of third-generation semiconductors.

C08-C09, C22-C23 booths: Zhuhai Gallium Future Technology Co., Ltd

Zhuhai Gallium Future Technology Co., Ltd. is a high-end gallium nitride power device design and manufacturing company focused on innovative research and application of third-generation semiconductor GaN on Si device technology. The core team is led by Dr. Wu Yifeng, an IEEE Fellow, and is composed of the founder of the Shenzhen Hong Kong Institute of Microelectronics and former founding members of Huawei HiSilicon Semiconductor. Having mature experience in industrial research and development as well as market operation.

Gallium Future is committed to providing the industry with gallium nitride devices and system solutions ranging from 30W to 10KW, and can achieve mass production of 10KW and 900V gallium nitride devices.

Booth B01-B02: Shenzhen Meiposen Semiconductor Co., Ltd

Shenzhen Meiposen Semiconductor Co., Ltd. was established in 2014, headquartered in Shekou, Shenzhen, at the forefront of China's reform and innovation. It is a professional power semiconductor component design company. The company's products include medium to high power field-effect transistors (full range of high, medium, and low voltage products, Trench MOSFET/SGT MOSFET/Super Junction MOSFET/Planar MOSFET), SiC diodes, SIC MOSFETs, and other series of products.

Mapson Semiconductor has research and development centers in Shenzhen/Shanghai, and the main R&D personnel have rich industry experience in product development and production processes, with an average industry experience of over 15 years. We have established a semiconductor power device testing and application laboratory in Shenzhen, mainly responsible for product design verification, parameter testing, reliability verification, system analysis, failure analysis, etc., and undertaking the research and development quality verification of Mapson products. At present, Mapson Semiconductor's MOSFET and silicon carbide series products are used in LED power supplies, PD power supplies, PC and server power supplies, photovoltaic inverters, UPS， Charging stations, smart homes, BLDC,BMS, Small household appliances and other fields have been widely used.

Booth C06-C07: Transphorm Inc.

Transphorm Inc is a global semiconductor company that develops gallium nitride (GaN) transistors and modules for high-voltage power conversion applications. Transphorm, based on its industry-leading IP product portfolio and over 300 years of GaN engineering expertise, provides the highest performance, highest reliability GaN devices and top-notch application driven design support to a growing customer base.

Booth A18: Shanghai Xisu Microelectronics Technology Co., Ltd

Shanghai Xisu Microelectronics Technology Co., Ltd. (hereinafter referred to as "Xisu Microelectronics") is a high-tech chip company focused on gallium nitride (GaN) and silicon carbide (SiC) semiconductor fields, registered in the Lingang New Area of Shanghai Free Trade Zone.

Xisu Microelectronics' technology is composed of three experienced power device development teams, all of whom have 15 years of work experience before serving Xisu Microelectronics; Since its establishment, we have initiated product research and development work for 6-inch GaN FET and SiC MOSFET. After a year of in-depth research and development integration and vigorous research and development, we have become a company that masters the development of 6-inch GaN FET, SiC MOSFET devices, SBD processes, and driver chips.

Xisu Microelectronics completes wafer manufacturing, chip packaging, module packaging, performance testing, and reliability testing with domestic first-line semiconductor industry partners in IDM mode, providing GaN and SiC power devices and drive chip solutions for power electronics, electric vehicles, new energy industries, etc. At the same time, it contributes to the key links of China's independent GaN and silicon carbide power electronics industry chain.

B15 booth: Dalian Xinguan Technology Co., Ltd

Dalian Xinguan Technology Co., Ltd. is a semiconductor enterprise founded by an overseas returned team in March 2016. It is engaged in the research and development, design, production, and sales of third-generation semiconductor silicon-based gallium nitride epitaxial materials and power devices. It now has an internationally advanced 6-inch semiconductor device production line, covering MOCVD epitaxial furnaces and epitaxial characterization equipment, semiconductor chip production lines, wafer on wafer inspection systems, reliability testing systems, and application development systems. It has achieved mass production of 6-inch 650 volt silicon-based gallium nitride epitaxial wafers and various specifications of power devices. The application range of power supply for power devices is as low as 30W and as high as 6KW.

The device can be widely used in industries such as consumer electronics (fast charging, high-power adapters, etc.), electric vehicles, solar inverters, industrial motor drives, etc. The characteristic of Xinguan GaN power devices is that they can withstand breakdown voltages of up to 1500V, are compatible with standard MOS drivers, and have simple application development.

B26 booth: Jiangsu Nenghua Microelectronics Technology Development Co., Ltd

Jiangsu Nenghua Microelectronics Technology Development Co., Ltd. was established in June 2010 by a team of overseas returnees with doctoral degrees. The company has various GaN core technologies including epitaxy, design, manufacturing, testing, and packaging. It is a high-tech compound semiconductor enterprise specializing in the design, production, and sales of gallium nitride (GaN) wafers, chips, and modules.

Jiangsu Nenghua has built an 8-inch gallium nitride production line in 2017. Currently, the company's product line covers gallium nitride epitaxial wafers, gallium nitride power field-effect transistors, and gallium nitride power solutions. It is worth mentioning that Jiangsu Nenghua is one of the few companies in the world that can simultaneously master both E-mode and D-mode GaN technologies. And currently, mass production of these two products has been achieved, with the ability to produce and ship two solutions.